Effect of thermal stress on point defect behavior during single crystal Si growth
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2019
ISSN: 0021-4922,1347-4065
DOI: 10.7567/1347-4065/ab5b75